INVESTIGATION OF CONVERGENCE OF AN EXPANSION OF SCREENING-CHARGE DENSITY FOR IMPURITY IONS IN SEMICONDUCTORS

被引:3
作者
CSAVINSZKY, P [1 ]
机构
[1] UNIV MAINE,DEPT PHYS,ORONO,ME 04473
关键词
D O I
10.1002/qua.560120210
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:335 / 342
页数:8
相关论文
共 25 条
[1]   NOTE ON IONIZED IMPURITY SCATTERING IN SOLIDS [J].
ADAWI, I .
PHILOSOPHICAL MAGAZINE, 1966, 13 (122) :331-&
[2]  
ARFKEN G, MATHEMATICAL METHODS, P240
[3]   SPACE DEPENDENCE OF DIELECTRIC FUNCTION IN SI CRYSTAL [J].
AZUMA, M ;
SHINDO, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (03) :424-&
[4]  
BLAKEMORE FS, SEMICONDUCTOR PHYSIC, P346
[6]  
BROOKS H, 1955, ADV ELECTRONICS ELEC, V7, P156
[7]   THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].
CONWELL, E ;
WEISSKOPF, VF .
PHYSICAL REVIEW, 1950, 77 (03) :388-390
[8]  
CONWELL E, 1946, PHYS REV, V69, P258
[9]  
CSAVINSKY P, 1964, PHYS REV, V135, pAB3
[10]   VARIATIONAL PRINCIPLES FOR SOLVING NONLINEAR POISSON EQUATIONS FOR POTENTIAL OF IMPURITY IONS IN SEMICONDUCTORS [J].
CSAVINSZKY, P .
PHYSICAL REVIEW B, 1976, 14 (10) :4483-4487