INTERPRETATION OF ACCEPTOR SPECTRA IN SEMICONDUCTORS

被引：119

作者：

LIPARI, NO ^{[1
]}

BALDERESCHI, A ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,PHYS APPL LAB,CH-1007 LAUSANNE,SWITZERLAND

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 25卷 / 09期

关键词：

D O I：

10.1016/0038-1098(78)90785-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：665 / 668

页数：4

共 14 条

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[2] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

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[3]

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[5]

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HANSEN, WL .

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[7] EXCITATION SPECTRA OF GROUP 3 IMPURITIES IN GERMANIUM [J].

JONES, RL ;

FISHER, P .

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[8] THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J].

KITTEL, C ;

MITCHELL, AH .

PHYSICAL REVIEW, 1954, 96 (06) :1488-1493

[9] HYPERFINE SPLITTING OF DONOR STATES IN SILICON [J].

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[10]

MANCHON DD, 1970, 10TH P INT C PHYS SE, P760

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