HIGHER ABSORPTION EDGES IN CUBIC SIC

被引：36

作者：

CHOYKE, WJ

PATRICK, L

机构：

[1] Westinghouse Research Laboratories, Pittsburgh

来源：

PHYSICAL REVIEW | 1969年 / 187卷 / 03期

关键词：

D O I：

10.1103/PhysRev.187.1041

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In addition to the known indirect absorption edge of cubic SiC at 2.39 eV, measurements of light absorption in thin samples reveal indirect edges at 3.55 and 4.2 eV. Comparisons are made with calculated band separations. The absorption coefficient at 5 eV is 2.4×104 cm-1. There is no absorption edge near 4.6 eV, where some reflectivity measurements have suggested one. The first direct transition appears to be near 6 eV. © 1969 The American Physical Society.

引用

页码：1041 / &

共 15 条

[1] ELECTRONIC BAND STRUCTURE OF GROUP IV ELEMENTS AND OF III-V COMPOUNDS [J].