INTERPRETATION OF TRANSPORT RESULTS IN AMORPHOUS-SILICON

被引：44

作者：

SPEAR, WE

ALLAN, D

LECOMBER, P

GHAITH, A

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90620-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：357 / 362

页数：6

共 11 条

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[2]

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GRIFFITH, RW .

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[4]

Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[5] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].

LECOMBER, PG ;

SPEAR, WE .

PHYSICAL REVIEW LETTERS, 1970, 25 (08) :509-&

[6]

LEWIS AJ, 1975, 6TH P INT C AM LIQ S, P299

[7]

Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

[8] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

MADAN, A ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257

[9]

MADAN A, 1977, 7TH P INT C AM LIQ S, P377

[10] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

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