LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GA1-XALXAS

被引：12

作者：

CHANDRA, A

EASTMAN, LF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 01期

关键词：

D O I：

10.1149/1.2129620

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：211 / 216

页数：6

共 31 条

[1]

ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1289

[2]

BANISH MB, 1972, PROGR SOLID STATE CH, V7, P39

[3] PREPARATION AND PROPERTIES OF ALAS-GAAS MIXED CRYSTALS [J].

BLACK, JF ;

KU, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :249-&

[4] RECTIFICATION AT N-N GAAS - (GA, AL)AS HETEROJUNCTIONS [J].

CHANDRA, A ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1979, 15 (03) :90-91

[5]

CHANDRA A, 1978, FEB WORKSH COMP SEM

[6]

CHANDRA A, UNPUBLISHED

[7]

CHEUNG D, 1975, THESIS STANFORD U

[8] NEAR-EQUILIBRIUM LPE GROWTH OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES [J].

DAWSON, LR .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :86-96

[9]

DINGLE R, 1976, GALLIUM ARSENIDE REL, P210

[10] AUGER PROFILING STUDIES OF LPE N-ALXGA1-XAS-N-GAAS HETEROJUNCTIONS AND ABSENCE OF RECTIFICATION [J].

GARNER, CM ;

SHEN, YD ;

SU, CY ;

PEARSON, GL ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1480-1482

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