RAMAN INTENSITY PROFILES AND THE STACKING STRUCTURE IN SIC POLYTYPES

被引：29

作者：

NAKASHIMA, S

HANGYO, M

机构：

[1] Department of Applied Physics, Osaka University, Suita, Osaka, 565, 2-1, Yamadaoka

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 80卷 / 01期

关键词：

D O I：

10.1016/0038-1098(91)90590-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman intensity profiles of folded modes in SiC polytypes have been studied both experimentally and theoretically. The folded mode is denoted by a reduced wavevector of the corresponding phonon mode in 3C-SiC. It is found that there is a simple relationship between the hexagonality of the polytype structure and the reduced wavevector of the folded mode having the maximum Raman intensity. This relationship is explained by use of Raman structure factor, which is analogous to the structure factor in x-ray diffraction. It is also confirmed experimentally for higher polytypes up to 66R.

引用

页码：21 / 24

页数：4

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