DEEP LEVELS IN MOCVD GAAS GROWN UNDER DIFFERENT GA-AS MOL FRACTIONS

被引：41

作者：

ZHU, HZ

ADACHI, Y

IKOMA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90283-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：154 / 163

页数：10

共 14 条

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