GAINASP BURIED CHANNEL EA MODULATOR FOR 1.3MU-M FIBER LINKS

被引：2

作者：

LIN, SC

JING, XL

CHIN, MK

WALPITA, LM

YU, PKL

CHANG, WSC

机构：

[1] Univ of California at San Diego, La, Jolla, CA, USA, Univ of California at San Diego, La Jolla, CA, USA

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 24期

关键词：

BURIED CHANNEL EA MODULATOR - ELECTROABSORPTION - EXTERNAL INTENSITY MODULATION - OPTICAL MODULATION - SINGLE-MODE FIBER;

D O I：

10.1049/el:19870873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1257 / 1259

页数：3

共 13 条

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[7] WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION [J].

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[8] FREQUENCY CHIRPING OF EXTERNAL MODULATION AND ITS REDUCTION [J].

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[9] HIGH-SPEED ELECTROABSORPTION MODULATOR WITH STRIP-LOADED GAINASP PLANAR WAVE-GUIDE [J].

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[10]

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