CHARGE TRAPPING IN THIN NITRIDED SIO2-FILMS

被引：24

作者：

SEVERI, M

IMPRONTA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 21期

关键词：

D O I：

10.1063/1.98549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1702 / 1704

页数：3

共 19 条

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[2]

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YOUNG, DR ;

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LAI, S ;

CALISE, J .

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[5] THE EFFECT OF GATE METAL AND SIO2 THICKNESS ON THE GENERATION OF DONOR STATES AT THE SI-SIO2 INTERFACE [J].

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CALISE, JA .

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[6] THE IMPORTANCE OF THE ANODE FIELD IN CONTROLLING THE GENERATION RATE OF THE DONOR STATES AT THE SI-SIO2 INTERFACE [J].

FISCHETTI, MV .

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[7] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

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KUIPER, AET ;

TAMMINGA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6996-7002

[8] IDENTIFICATION OF ELECTRON TRAPS IN THERMAL SILICON DIOXIDE FILMS [J].

HARTSTEIN, A ;

YOUNG, DR .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :631-633

[9] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

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ISHIKAWA, H .

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[10]

Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

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