THE HALL-EFFECT IN INTEGRATED MAGNETOTRANSISTORS

被引：24

作者：

NATHAN, A

MAENAKA, K

ALLEGRETTO, W

BALTES, HP

NAKAMURA, T

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TOYOHASHI,AICHI 440,JAPAN

[2] UNIV ALBERTA,DEPT MATH,EDMONTON T6G 2G7,ALBERTA,CANADA

[3] SWISS FED INST TECHNOL,INST QUANTUM ELECTR,PHYS ELECTR LAB,CH-8093 ZURICH,SWITZERLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 01期

关键词：

D O I：

10.1109/16.21189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：108 / 117

页数：10

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[9] INTEGRATED 3-D MAGNETIC SENSOR BASED ON AN N-P-N TRANSISTOR [J].

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