OBSERVATION OF CHANGES IN THE ELECTRONIC DENSITY OF STATES AT A SI (111) SURFACE DURING ADSORPTION OF OXYGEN BY AUGER-ELECTRON SPECTROSCOPY

被引：18

作者：

MORGEN, P

ONSGAARD, JH

TOUGAARD, S

机构：

[1] Physics Institute, Odense University

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 08期

关键词：

D O I：

10.1063/1.90858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The adsorption of oxygen on a Si (111) surface is accompanied by significant changes in the local electronic densities of states. These effects have been monitored as changes in the spectral distribution of emitted L 2,3 VV Auger electrons from pure and oxygen-covered surfaces. Oxygen coverages varying from 0 to slightly below monolayer coverage (237L) have been employed. The present results are compared with data from recent sputter-profiling studies of the Si-SiO2 interface, showing similar behaviors in the two types of experiments.

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页码：488 / 490

页数：3

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