PRODUCTION AND ANNEALING OF COLOR CENTERS IN RF SPUTTERED SIO2 FILMS

被引：36

作者：

HICKMOTT, TW

机构：

来源：

关键词：

D O I：

10.1063/1.1660577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2543 / &

共 41 条

[31] EVALUATION OF THIN FILM INSULATORS [J].

PLISKIN, WA .

[32]

PUTNER T, 1967, THIN SOLID FILMS, V1, P165

[33] MODEL FOR E1' CENTER IN SIO2 [J].

RUFFA, AR .

[34] ARGON CONTENT OF SIO2 FILMS DEPOSITED BY RF SPUTTERING IN ARGON [J].

SCHWARTZ, GC ;

JONES, RE .

TURNER, WH ;

LEE, HA .

[36]

VOSSEN JL, 1968, RCA REV, V29, P149

[37] PARAMAGNETIC RESONANCE OF LATTICE DEFECTS IN IRRADIATED QUARTZ [J].

WEEKS, RA .

WEEKS, RA ;

NELSON, CM .

[39] RELATION BETWEEN E] CENTERS + HYDROXYL BONDS IN SILICA [J].

WEEKS, RA ;

LELL, E .

[40]

WEEKS RA, 1963, 1 P INT C PARA RES J