SPACE-CHARGE REGION OF NEUTRON-IRRADIATED SILICON P+N JUNCTIONS

被引:7
作者
BUEHLER, MG
机构
关键词
D O I
10.1109/TNS.1970.4325815
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:341 / +
页数:1
相关论文
共 13 条
[1]  
AIKEN JG, 1969, F1962868C0184 CONTR
[2]   DESIGN CURVES FOR PREDICTING FAST-NEUTRON-INDUCED RESISTIVITY CHANGES IN SILICON [J].
BUEHLER, MG .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (10) :1741-&
[3]  
BUEHLER MG, 1969, T METALL SOC AIME, V245, P511
[4]  
BUEHLER MG, 1969, F1962868C0184 CONTR
[5]  
CAGNINA SF, 1967, PROPERTIES GOLD DOPE, V114, P1165
[6]  
CRABBE JS, PRIVATE COMMUNICATIO
[7]   FACTORS INFLUENCING PREDICTION OF TRANSISTOR CURRENT GAIN IN NEUTRON RADIATION [J].
FRANK, M ;
TAULBEE, CD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :127-+
[8]  
GROVE AS, 1967, PHYS TECHNOL S, P171
[9]   PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS [J].
KALMA, AH ;
CORELLI, JC .
PHYSICAL REVIEW, 1968, 173 (03) :734-+
[10]   FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].
SAH, CT ;
REDDI, VGK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :345-+