MICROMECHANICALLY STRUCTURIZED SENSORS ON GAAS - AN INTEGRATED ANEMOMETER

被引：10

作者：

FRICKE, K

HARTNAGEL, HL

RITTER, S

WURFL, J

机构：

[1] Technische Hochschule Darmstadt, 6100 Darmstadt

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90421-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Micromechanical structures on GaAs are fabricated by making use of the different chemical properties of heterostructures, epitaxially grown on GaAs. One of the most advanced heterosystems on GaAs substrates is the AlGaAs/GaAs system. Due to the large technological relevance of this system a number of wet chemical etchants exist that are capable to either etch GaAs selectively to AlGaAs or vice versa. This is the prerequisite for a large number of different types of integrated sensors making use of micromechanical elements such as membranes, cantilevers etc. In this paper the realization of an anemometer integrated on GaAs is presented.

引用

页码：195 / 198

页数：4

共 4 条

[1]

Hok, Et al., Batch Fabrication of Micromechanical Elements in GaAs-Al<sub>x</sub>Ga<sub>1−x</sub>As, Sensors and Actuators, 3, (1983)

[2]

Zhang, Et al., Submicron Movable Gallium Arsenide Mechanical Structures and Actuators, Proc. Micro Electro Mechanical Systems '92, (1992)

[3]

Hjort, Et al., Epitaxial Regrowth in Surface Micromachining of GaAs, Proc. Micro Electro Mechanical Systems'92, (1992)

[4]

Van Herwaarden, Et al., Thermal Sensors Based on the Seebeck Effect, Sensors and Actuators, 10, (1986)

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