INFLUENCE OF TRANSVERSE MAGNETORESISTANCE ON HALL-EFFECT MEASUREMENTS ON N-TYPE GERMANIUM AND OTHER SEMICONDUCTORS

被引：5

作者：

PARTAIN, LD

LAKSHMINARAYANA, MR

WESTGATE, CR

机构：

[1] UNIV DELAWARE,DEPT ELECT ENGN,NEWARK,DE 19711

[2] JOHNS HOPKINS UNIV,DEPT ELECT ENGN,BALTIMORE,MD 21218

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.323975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2570 / 2575

页数：6

共 12 条

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[3]

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[8]

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[9] ANISOTROPIC HALL COEFFICIENTS IN N-TYPE GERMANIUM [J].

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MAEDA, H .

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[10] HIGH MAGNETIC-FIELD DEPENDENCE OF HALL-COEFFICIENT IN N-TYPE GERMANIUM AND IN OTHER SEMICONDUCTORS WITH ELLIPSOIDAL SURFACES OF CONSTANT ENERGY [J].

PARTAIN, LD ;

LAKSHMINARAYANA, MR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1015-1022

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