DIFFRACTION-LIMITED GAAS LASER WITH EXTERNAL RESONATOR

被引:11
作者
PHILLIPRUTZ, EM
EDMONDS, HD
机构
[1] Quantum Electronics Department, IBM Corporation, Gaithersburg, MD
[2] Quantum Electronics Department, IBM Corporation, Yorktown Heights, NY
关键词
D O I
10.1364/AO.8.001859
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
To obtain diffraction-limited radiation, a GaAs injection laser of 185 μ width was operated with an external resonator. The measured far-field radiation of this laser appears to be mainly in the lowest order transverse mode over nearly the entire width of the p-n junction. The peak radiated power at room temperature is 2.2 W and the external quantum efficiency is 0.031. The external resonator of the diffraction-limited GaAs laser has spherical symmetry although the lasing junction is asymmetrical and no mode-selecting iris is included. The operation of the GaAs laser with the external resonator resulted in a radiance increase of more than one magnitude. © 1969 Optical Society of America.
引用
收藏
页码:1859 / +
页数:1
相关论文
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