OPTICAL EFFECTS IN HEMTS

被引：6

作者：

DESALLES, AA

机构：

[1] CETUC-PUC, Rio de Janeiro, Rio de Janeiro, Rua Marquěs de Sǎo Vicente, 225, Gávea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1990年 / 3卷 / 10期

关键词：

HEMTs; microwave‐optical interactions; optical effects;

D O I：

10.1002/mop.4650031007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The major photoeffects affecting the DC and RF performance of depletion mode Al0.3Ga0.7As/GaAs HEMTs are presented. When photons are absorbed only in the GaAs layer, an increase in the electron concentration of the 2‐DEG channel is estimated (photoconductive effect). When photons are also absorbed in the AlGaAs layer the gate junction photovoltage is calculated (photovoltaic effect). Copyright © 1990 Wiley Periodicals, Inc., A Wiley Company

引用

页码：350 / 354

页数：5

共 11 条

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