STABILITY STUDY OF LASER IRRADIATION OF SILICON DIFFUSED WITH ARSENIC

被引:26
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CHU, WK
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10.1063/1.91450
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O59 [应用物理学];
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页码:273 / 275
页数:3
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[2]  
CHU WK, 1979, LASER SOLID INTERACT, V50, P305
[3]  
CHU WK, 1979, OCT TOP C LAS EL BEA
[4]  
GRINSHTEIN PM, 1969, SOV PHYS SEMICOND+, V3, P244
[5]   EFFECT OF FREE-CARRIER ABSORPTION ON THE ANNEALING OF ION-IMPLANTED SILICON BY PULSED LASERS [J].
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APPLIED PHYSICS LETTERS, 1979, 34 (05) :332-334
[6]  
SCHWEKNER RO, 1971, J APPL PHYS, V32, P3195