SECONDARY ION MASS-SPECTROMETRY GENERATES SWELLING OF GASB - DEPTH RESOLUTION AND SECONDARY ION YIELDS

被引:15
作者
GAUNEAU, M [1 ]
CHAPLAIN, R [1 ]
RUPERT, A [1 ]
TOUDIC, Y [1 ]
CALLEC, R [1 ]
ANDRE, E [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN, FRANCE TELECOM, CNS, TCI, F-38243 MEYLAN, FRANCE
关键词
D O I
10.1063/1.353150
中图分类号
O59 [应用物理学];
学科分类号
摘要
The III-V compound gallium antimonide (GaSb), which has a relatively narrow band gap, is of increasing importance for the fabrication of optoelectronic devices. However, GaSb was shown to swell during high energy ion implantation. The surface upheaval increased with the dose, energy, and mass of implanted ions, reaching heights of about 1 mum under the most harmful conditions. With the low energies used for secondary ion mass spectrometry (SIMS), i.e., between 1 and 20 keV, a similar behavior was observed under cesium bombardment, with elevations of 100 nm, giving rise to abnormal secondary ion yields and depth profile distortions. Here, the phenomenon has been investigated under cesium and oxygen bombardment, between 1.25 and 14.5 keV, with doses from 10(15) cm-2 to above 10(17) cm-2 . The swelling of the material is confirmed whatever the nature of primary ions. The mechanism is related to the damage caused by the primary ion bombardment rather than to the presence of oxygen. The critical damage threshold of 10(22) cm-3 atom displacements is largely exceeded, resulting in vacancy clusters, microtwins, and finally inducing polycrystallization of GaSb with an upheaval of the initial surface. In the case of SIMS, both swelling and sputtering occur simultaneously. Preferential sputtering reveals microcrystals whose dimensions depend on both the thicknesses of damaged layers, and hence, the penetration depths of primary ions and the beam impact angles. The phenomenon has two major consequences on SIMS measurements in (AlGa)Sb structures. First, it deteriorates the depth resolution, and second, it modifies the elemental secondary ion yields above a certain dose. Both these problems are addressed and a comparison with (AlGa)As is made.
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页码:2051 / 2056
页数:6
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