PICTORIAL DERIVATION OF THE INFLUENCE OF DEGENERACY AND DISORDER ON NONDEGENERATE MINORITY-CARRIER CONCENTRATION AND RECOMBINATION CURRENT IN HEAVILY DOPED SILICON

被引：18

作者：

LINDHOLM, FA

FOSSUM, JG

机构：

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 09期

关键词：

D O I：

10.1109/EDL.1981.25414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：230 / 234

页数：5

共 32 条

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[10]

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