HOW TO DETERMINE PARAMETERS OF DEEP LEVELS BY DLTS SINGLE TEMPERATURE SCANNING

被引:25
作者
GOTO, H
ADACHI, Y
IKOMA, T
机构
[1] Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
关键词
D O I
10.1143/JJAP.18.1979
中图分类号
O59 [应用物理学];
学科分类号
摘要
A simplified method of determining the energy level and the capture cross-section of a deep level from the DLTS spectrum is proposed, together with a detailed analysis of its spectrum shape. Since this method requires only a single temperature scan, the time necessary to determine parameters from the DLTS becomes greatly shortened. © 1979 The Japan Society of Applied Physics.
引用
收藏
页码:1979 / 1982
页数:4
相关论文
共 2 条
[1]  
Ikoma T., 1977, Oyo Buturi, V46, P519
[2]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032