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HOW TO DETERMINE PARAMETERS OF DEEP LEVELS BY DLTS SINGLE TEMPERATURE SCANNING
被引:25
作者
:
GOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
GOTO, H
ADACHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
ADACHI, Y
IKOMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
IKOMA, T
机构
:
[1]
Institute of Industrial Science, University of Tokyo, Tokyo, 7-22-1, Roppongi, Minato-ku
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1979年
/ 18卷
/ 10期
关键词
:
D O I
:
10.1143/JJAP.18.1979
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
A simplified method of determining the energy level and the capture cross-section of a deep level from the DLTS spectrum is proposed, together with a detailed analysis of its spectrum shape. Since this method requires only a single temperature scan, the time necessary to determine parameters from the DLTS becomes greatly shortened. © 1979 The Japan Society of Applied Physics.
引用
收藏
页码:1979 / 1982
页数:4
相关论文
共 2 条
[1]
Ikoma T., 1977, Oyo Buturi, V46, P519
[2]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
←
1
→
共 2 条
[1]
Ikoma T., 1977, Oyo Buturi, V46, P519
[2]
DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
:3023
-3032
←
1
→