THE CRYSTALLOGRAPHY AND ATOMIC-STRUCTURE OF LINE DEFECTS IN TWIN BOUNDARIES IN HEXAGONAL-CLOSE-PACKED METALS

被引：52

作者：

POND, RC

BACON, DJ

SERRA, A

SUTTON, AP

机构：

[1] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD OX1 3PH,ENGLAND

[2] UNIV POLITECN CATALUNYA,DEPT MATEMAT APLICADA 3,E-08034 BARCELONA,SPAIN

来源：

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 1991年 / 22卷 / 06期

关键词：

D O I：

10.1007/BF02660650

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The crystallographic analysis of line defects in interfaces is discussed and applied to the particular case of twinning dislocations in hexagonal-close-packed (hcp) metals, which have been studied here by atomistic simulation. Two crystallographic approaches are used; first, the concept of bicrystal structure maps is developed for the case of interfaces between crystals having multiple-atom bases, and second, the topological theory of line defects based on symmetry theory is used. On the basis of the atomistic calculations, some general conclusions concerning the relative contribution to the total energy of dislocations made by their elastic fields and core structures are presented.

引用

页码：1185 / 1196

页数：12

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