PHOSPHORUS ANTISITE DEFECTS IN LOW-TEMPERATURE INP

We have studied low-temperature molecular-beam-epitaxy-grown InP using a variety of experimental techniques. Hall effect and far-infrared absorption under hydrostatic pressure have been employed to determine the ionization energies of two dominant donor levels at 0.11 eV above and 0.23 eV below the conduction-band GAMMA minimum. Measurements of photoluminescence and optically detected magnetic resonance indicate that those two levels are first and second ionization states of the phosphorus antisite double donor defect. The present results demonstrate that the antisite is a prevalent defect responsible for electrical and optical properties of the nonstochiometric, low-temperature InP.