ELECTRON DESORPTION STUDY OF HF ETCHED SI(100)

被引：8

作者：

CRAIG, JH

CARISS, C

CRAIG, MJ

机构：

[1] Department of Physics, University of Texas at El Pasc, El Paso

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.578771

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electron stimulated desorption signature of a HF etched Si(100) surface has been examined in this study. Hydrogen passivation results in strong H+ and H- desorption signals. Both F+ and F- species are electronically desorbed, although no fluorine is observed in Auger electron spectroscopy. Low current density argon ion sputtering results in significant changes in the H+ and H- energy distributions which suggest an ion induced change in hydrogen adsorbate structure.

引用

页码：554 / 556

页数：3

共 6 条

[1]

BOZACK MJ, 1987, SURF SCI, V184, pL332, DOI 10.1016/S0039-6028(87)80259-5

[2] INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].