HEAT-TREATMENT EFFECTS ON AN IN-GAAS OHMIC CONTACT

[1] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[2] CASEY HC, 1973, ATOMIC DIFFUSION SEM, pCH6

[3] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[4] MICROWAVE PHENOMENA IN BULK GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 94 - +

[5] HANDU VK, 1972, J I TELECOMMUN ENG, V18, P527

[6] LOW-TEMPERATURE OHMIC CONTACTS TO GALLIUM-ARSENIDE USING IN AND AL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (03) : 374 - 374

[7] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[8] CONTACT RESISTANCES OF SEVERAL METALS AND ALLOYS TO GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 709 - &

[9] Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39

[10] METALLIC CONTACTS FOR GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1189 - +

[1] ALLOYED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807

[2] CASEY HC, 1973, ATOMIC DIFFUSION SEM, pCH6

[3] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[4] MICROWAVE PHENOMENA IN BULK GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 94 - +

[5] HANDU VK, 1972, J I TELECOMMUN ENG, V18, P527

[6] LOW-TEMPERATURE OHMIC CONTACTS TO GALLIUM-ARSENIDE USING IN AND AL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (03) : 374 - 374

[7] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[8] CONTACT RESISTANCES OF SEVERAL METALS AND ALLOYS TO GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) : 709 - &

[9] Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39

[10] METALLIC CONTACTS FOR GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1189 - +