SEMICONDUCTOR-TO-METAL TRANSITIONS INDUCED BY PRESSURE IN THE AMORPHOUS ALLOY SYSTEM A-SI1-YNIY-H

被引：4

作者：

ASAL, R

BAYLISS, SC

DAVIS, EA

机构：

[1] Department of Physics and Astronomy, University of Leicester, Leicester, LE1 7RH, University Road

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80273-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The optical absorption edges and electrical conductivities of sputtered films of a-Si1-yNiy:H, with values of y lying on the insulating side of the metal-insulator transition, have been investigated as a function of applied pressure. The optical gaps decrease with pressure at a rate that increases with y and can be made to reach zero. The electrical conductivities increase with pressure up to limiting saturation values which we associate with the metallic state. For a given alloy, the pressure at which the two effects occur is approximately the same.

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页码：931 / 934

页数：4

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