INFLUENCE OF QUANTUM-SIZE EFFECT AND INTERFACE ROUGHNESS ON THE GIANT MAGNETORESISTANCE IN ULTRATHIN MAGNETIC LAYERED STRUCTURES

被引:31
作者
BARNAS, J [1 ]
BRUYNSERAEDE, Y [1 ]
机构
[1] ADAM MICKIEWICZ UNIV POZNAN,INST PHYS,DIV MAGNETISM THEORY,PL-60769 POZNAN,POLAND
来源
EUROPHYSICS LETTERS | 1995年 / 32卷 / 02期
关键词
D O I
10.1209/0295-5075/32/2/013
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In-plane electronic transport in ultrathin structures composed of two ferromagnetic films separated by a nonmagnetic metallic spacer is analysed theoretically. It is shown that quantum size effects give rise to oscillations in the dependence of the resistivity and giant magnetoresistance on the spacer thickness. It is also shown that the spin-dependent scattering due to interface roughness can enhance or compensate the magnetoresistance effect generated by the spin-dependent bulk scattering.
引用
收藏
页码:167 / 172
页数:6
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