GRAIN-BOUNDARY ENSEMBLES IN MATERIALS WITH FCC, BCC AND DIAMOND STRUCTURES

被引:23
作者
FIONOVA, LK
机构
[1] Inst of Microelectronics Technology, and High Purity Materials, Moscow, Russia
关键词
D O I
10.1016/0254-0584(94)90156-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Data on grain boundary ensembles are presented for a wide class of materials characterized by susceptibility to annealing twinning and twin morphology. The spectra of grain boundary energies and their variation versus temperature, presence of impurities and additional energy related to extrinsic defects are considered with a view to explaining physical features of grain boundary distributions. Principles of grain boundary design and several examples of its application are given.
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页码:201 / 224
页数:24
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