A HIGHEST RATE SELF-SPUTTERING MAGNETRON SOURCE

被引:47
作者
KUKLA, R
KRUG, T
LUDWIG, R
WILMES, K
机构
[1] Leybold AG
关键词
D O I
10.1016/0042-207X(90)94147-I
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By switching from pure magnetic plasma confinement to a mixture of magnetic plus electrostatic plasma confinement, a new sputter mangetron source has been developed which combines the advantages of sputter deposition (good adherence and structure) with the productivity of e-gun evaporators (deposition rates of some thousand angstrom per second). At power densities above 80 W cm-2 the discharge keeps burning even without a noble gas atmosphere (self-sputtering).
引用
收藏
页码:1968 / 1970
页数:3
相关论文
共 4 条
[1]  
CHAPIN JS, 1974, RES DEV, V1, P39
[2]  
Chapin JS, 1979, US patent, Patent No. [4 166 018, 4166018]
[3]  
GEISLER M, 1986, P INT C PLASMA SOURC, P584
[4]  
HARTWIG E, 1988, 31ST P ANN TECHN C S, P76