AN ENERGY-DEPENDENT 2-DIMENSIONAL SUBSTRATE CURRENT MODEL FOR THE SIMULATION OF SUBMICROMETER MOSFETS

被引：14

作者：

AGOSTINELLI, VM ^{[1
]}

BORDELON, TJ ^{[1
]}

WANG, XL ^{[1
]}

YEAP, CF ^{[1
]}

MAZIAR, CM ^{[1
]}

TASCH, AF ^{[1
]}

机构：

[1] INTEL CORP,SANTA CLARA,CA 95052

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 11期

关键词：

D O I：

10.1109/55.192837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multicurrent contour, average-energy-based, substrate current model for silicon submicrometer NMOS FET's is presented as a significant improvement to the local-field model that is commonly used in modern drift-diffusion device simulators. The model is implemented as a post-processor by applying a one-dimensional energy conservation equation to many current contours in order to generate a two-dimensional representation of average energy and impact ionization rate which is integrated to calculate the substrate current. Comparisons of simulations and experimental I-V curves for both simple and LDD MOSFET's are presented. Outstanding agreement has been obtained over a wide range of bias conditions and channel lengths.

引用

页码：554 / 556

页数：3

共 8 条

[1]

BORDELON TJ, 1991, P INT SEMICONDUCTOR, P23

[2] ALCOHOL-CONSUMPTION AND BLOOD-PRESSURE - SURVEY OF THE RELATIONSHIP AT A HEALTH-SCREENING CLINIC [J].