BELOW BAND-GAP ELECTROABSORPTION IN BULK SEMIINSULATING GAAS

被引：10

作者：

ADAMS, JC

CAPPS, CD

FALK, RA

FERRIER, SG

机构：

[1] Boeing Defense and Space Group, Box 3999, Seattle, WA 98124

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.109973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroabsorption measurements of bulk semi-insulating GaAs using a pulsed applied voltage are presented for the wavelength range 890-920 nm and compared with results of the same measurement using a dc applied voltage. In the latter case, field inhomogeneities in the GaAs gives a spatially dependent absorption which thwarts extraction of the absorption coefficient versus electric field. We circumvent this problem by transiently measuring the absorption during a pulsed bias voltage when the field in the sample is nearly uniform.

引用

页码：633 / 635

页数：3

共 10 条

[1]

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[2]

CAPPS CD, 1993, SPIE P, V1873, P174

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[4]

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[8] TRAP-ENHANCED ELECTRIC-FIELDS IN SEMI-INSULATORS - THE ROLE OF ELECTRICAL AND OPTICAL CARRIER INJECTION [J].

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[9]

SCHOENBACH KH, 1992, SPIE, V1632, P54

[10]

VALLIATH G, COMMUNICATION

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