POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS DEPOSITED AT LOW SUBSTRATE-TEMPERATURE BY REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION USING SIF4/H-2

被引：35

作者：

WOO, JI

LIM, HJ

JANG, J

机构：

[1] Department of Physics, Kyung Hee University, Dongdaemoon-ku

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline silicon was deposited on Coming 7059 glass by remote plasma chemical vapor deposition using SiF2/H-2. Raman spectroscopy indicated a crystalline fraction of 85% in films deposited at a substrate temperature of 350 degrees C. Thin film transistors made of this material exhibited a field effect mobility of 7.5 cm(2)/V s and a threshold voltage of 6.1 V.

引用

页码：1644 / 1646

页数：3

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