BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY IN STRESSED N-TYPE GERMANIUM

[1] DRIFT VELOCITY OF HOT ELECTRONS IN N-TYPE GERMANIUM [J]. CANADIAN JOURNAL OF PHYSICS, 1962, 40 (09) : 1056 - &

[2] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[3] NEGATIVE DIFFERENTIAL RESISTANCE IN NTYPE GERMANIUM [J]. ELECTRONICS LETTERS, 1967, 3 (11) : 505 - &

[4] FAWCETT W, PRIVATE COMMUNICATIO

[5] HOT CARRIER HALL MOBILITY AND MAGNETORESISTANCE IN N-TYPE GERMANIUM FOR INTERMEDIATE CARRIER CONCENTRATION [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 91 (572P): : 425 - +

[6] HOT-CARRIER DC CONDUCTION IN ELEMENTAL SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 385 - &

[7] PAIGE EGS, 1964, PROGR SEMICOND, V8, P162

[8] DRIFT VELOCITY AND ANISOTROPY OF HOT ELECTRONS IN N GERMANIUM [J]. PHYSICAL REVIEW, 1962, 126 (05): : 1737 - &

[9] DISTRIBUTION FUNCTIONS FOR HOT ELECTRONS IN MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1961, 124 (03): : 777 - &

[10] INTERVALLEY TRANSFER AND MICROWAVE CURRENT OSCILLATIONS IN STRAINED N-TYPE GERMANIUM [J]. APPLIED PHYSICS LETTERS, 1968, 12 (07) : 233 - +

[1] DRIFT VELOCITY OF HOT ELECTRONS IN N-TYPE GERMANIUM [J]. CANADIAN JOURNAL OF PHYSICS, 1962, 40 (09) : 1056 - &

[2] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[3] NEGATIVE DIFFERENTIAL RESISTANCE IN NTYPE GERMANIUM [J]. ELECTRONICS LETTERS, 1967, 3 (11) : 505 - &

[4] FAWCETT W, PRIVATE COMMUNICATIO

[5] HOT CARRIER HALL MOBILITY AND MAGNETORESISTANCE IN N-TYPE GERMANIUM FOR INTERMEDIATE CARRIER CONCENTRATION [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 91 (572P): : 425 - +

[6] HOT-CARRIER DC CONDUCTION IN ELEMENTAL SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 385 - &

[7] PAIGE EGS, 1964, PROGR SEMICOND, V8, P162

[8] DRIFT VELOCITY AND ANISOTROPY OF HOT ELECTRONS IN N GERMANIUM [J]. PHYSICAL REVIEW, 1962, 126 (05): : 1737 - &

[9] DISTRIBUTION FUNCTIONS FOR HOT ELECTRONS IN MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1961, 124 (03): : 777 - &

[10] INTERVALLEY TRANSFER AND MICROWAVE CURRENT OSCILLATIONS IN STRAINED N-TYPE GERMANIUM [J]. APPLIED PHYSICS LETTERS, 1968, 12 (07) : 233 - +