PHOTOELECTROCHEMICAL CHARACTERIZATION OF CUGASE2 AND CU(GA, IN)SE2 FILMS

被引：10

作者：

KISILEV, A

MARCU, V

CAHEN, D

SCHOCK, HW

NOUFI, R

机构：

[1] WEIZMANN INST SCI,DEPT STRUCT CHEM,IL-76100 REHOVOT,ISRAEL

[2] WEIZMANN INST SCI,CTR ENERGY RES,IL-76100 REHOVOT,ISRAEL

[3] UNIV STUTTGART,INST PHYS ELECTR,W-7000 STUTTGART 80,GERMANY

[4] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

SOLAR CELLS | 1990年 / 28卷 / 01期

关键词：

D O I：

10.1016/0379-6787(90)90038-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Values for effective electronic parameters and the optical band gaps of CuGaSe2 films and Cu(Ga, In)Se2 films are determined for films with varying metal stoichiometries, by using an organic liquid electrolyte to form a Schottky barrier to the films. © 1990.

引用

页码：57 / 67

页数：11

共 26 条

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