PHOTOCONDUCTIVITY IN POLY(BIPHENYLMETHYL SILYLENE)

被引:5
作者
ECKHARDT, A [1 ]
YARS, N [1 ]
WOLLNY, T [1 ]
SCHABEL, W [1 ]
NESPUREK, S [1 ]
机构
[1] ACAD SCI CZECH REPUBL,INST MACROMOLEC CHEM,CS-16206 PRAGUE 6,CZECH REPUBLIC
来源
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1994年 / 98卷 / 06期
关键词
ELECTRICAL PROPERTIES; PHOTOCHEMISTRY; POLYMERS;
D O I
10.1002/bbpc.19940980614
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Quantum yields of charge carrier formation, phi(cc), in poly(biphenylmethyl silylene), PBMSi, and poly(methylphenyl silylene), PMPSi, have been determined at 23-degrees-C with the aid of the xerographic discharge method. At F = 1 x 10(8) V/m and lambda(inc) = 330-360 nm: phi(cc) = 0.10 (PBMSi) and phi(cc) = 0.03 (PMPSi). Upon the addition of 2,3,5,6-tetrachlorobenzoquinone (chloranil) at c = 3 mol %, to the polysilylene films, the quantum yields were increased: phi(cc) = 0.21 (PBMSi) and phi(cc) = 0.13 (PMPSi). The mobility of charge carriers mu in PBMSi is about one order of magnitude lower than in PMPSi. Upon addition of 3 mol % chloranil to PBMSi mu increased slightly.
引用
收藏
页码:853 / 857
页数:5
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