INSITU PRODUCTION OF SPUTTERED EPITAXIAL HOBA2CU3O7-X THIN-FILMS

Epitaxial HoBa2Cu3O7-x thin films (100-200 nm) were successfully prepared on SrTiO3 (100), MgO (100), and LaAlO3 substrates by single target DC sputtering. Pure oxygen gas at high pressure was used. Without any post-deposition annealing superconducting films were produced. The films deposited at substrate temperatures of about 750 C had a good crystalline structure with superconducting transitions above 90 K on all substrates. A critical current density above 105 A/cm2 at 77 K was measured. The HoBa2Cu3O7-x thin were characterized by X-ray diffraction, SEM and EDX measurements. © 1990.