EPITAXIAL-GROWTH OF SRTIO3 FILMS ON PT ELECTRODES AND THEIR ELECTRICAL-PROPERTIES

被引：87

作者：

ABE, K

KOMATSU, S

机构：

[1] Metals and Ceramics Laboratory, Toshiba R and D Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210, Komukai-Toshiba-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期

关键词：

SRTIO3; EPITAXIAL GROWTH; DIELECTRIC PROPERTIES; LEAKAGE CURRENT; SCHOTTKY BARRIER; RF SPUTTERING; THIN-FILM CAPACITOR;

D O I：

10.1143/JJAP.31.2985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial SrTiO3 films of perovskite structure with thicknesses of 46 to 184 nm were prepared by rf magnetron sputtering, holding substrate temperature at 400-degrees-C, on Pt films which were also epitaxially grown on a MgO(100) substrate in advance. The relative dielectric constant was estimated to be more than 300, and the leakage current density was less than 10(-8) A/cm2. The analysis of the leakage current suggests Schottky barrier formation at the interface between SrTiO3 and Pt films, with a barrier height of about 1 V.

引用

页码：2985 / 2988

页数：4