STRUCTURAL AND ELECTRONIC-PROPERTIES OF BULK ZNSE

被引：34

作者：

CONTINENZA, A ^{[1
]}

MASSIDDA, S ^{[1
]}

FREEMAN, AJ ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.38.12996

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12996 / 13001

页数：6

共 34 条

[1] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J].

BACHELET, GB ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1985, 31 (02) :879-887

[2] MEAN-VALUE POINT IN BRILLOUIN ZONE [J].

BALDERESCHI, A .

PHYSICAL REVIEW B, 1973, 7 (12) :5212-5215

[3] ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS [J].

BERNARD, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1987, 36 (06) :3199-3228

[4] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[5] FRUSTRATED ANTIFERROMAGNETISM AT HETEROINTERFACES IN A SEMICONDUCTOR SUPERLATTICE - MNSE/ZNSE [J].

CHANG, SK ;

LEE, D ;

NAKATA, H ;

NURMIKKO, AV ;

KOLODZIEJSKI, LA ;

GUNSHOR, RL .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) :4835-4838

[6] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, J ;

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (06) :2786-2794

[7] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[8] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY [J].

CHENG, H ;

DEPUYDT, JM ;

POTTS, JE ;

SMITH, TL .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :147-149

[9] DIPOLE EFFECTS AND BAND OFFSETS AT SEMICONDUCTOR INTERFACES [J].

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1988, 37 (09) :4528-4538

[10] CALCULATION OF BULK MODULI OF DIAMOND AND ZINCBLENDE SOLIDS [J].

COHEN, ML .

PHYSICAL REVIEW B, 1985, 32 (12) :7988-7991

← 1 2 3 4 →