GENERATION OF 110 GHZ TRAIN OF SUBPICOSECOND PULSES IN 1.535-MU-M SPECTRAL REGION BY PASSIVELY MODELOCKED INGAASP/INP LASER-DIODES

被引：13

作者：

DERYAGIN, AG

KUKSENKOV, DV

KUCHINSKII, VI

PORTNOI, EL

KHRUSHCHEV, IY

机构：

[1] Physico-technical Institute, Russian Academy of Sciences, St. Petersburg 194021

[2] General Physics Institute, Russian Academy of Sciences, Moscow 117942

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 04期

关键词：

SEMICONDUCTOR LASERS; PULSE GENERATION;

D O I：

10.1049/el:19940238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Subpicosecond optical pulses are generated by passive modelocking in bulk active layer InGaAsP semiconductor lasers under CW pumping. The saturable absorber regions are formed by deep implantation of heavy ions into the diode facets. Optical pulses with 0.64 ps width are realised at 110 GHz repetition rate without using any external AC sources. No changes in spectral and autocorrelation traces were observed after 50 h of CW operation.

引用

页码：309 / 311

页数：3

共 5 条

[1] SUBPICOSECOND MONOLITHIC COLLIDING-PULSE MODE-LOCKED MULTIPLE QUANTUM-WELL LASERS [J].