CONTRASTED BEHAVIOR OF AN ELECTRON-GAS IN MGO, AL2O3 AND SIO2

被引：61

作者：

GUIZARD, S

MARTIN, P

DAGUZAN, P

PETITE, G

AUDEBERT, P

GEINDRE, JP

DOSSANTOS, A

ANTONNETTI, A

机构：

[1] ECOLE POLYTECH,LULI,F-91128 PALAISEAU,FRANCE

[2] ENSTA,OPT APPL LAB,F-91120 PALAISEAU,FRANCE

来源：

EUROPHYSICS LETTERS | 1995年 / 29卷 / 05期

关键词：

D O I：

10.1209/0295-5075/29/5/009

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the observation, by use of a sub-picosecond time-resolved phase-sensitive technique, of an electron gas pumped by an intense femtosecond laser pulse into the conduction band of three different wide-band-gap oxides. The free-carriers lifetime is measured to be two orders of magnitude longer in MgO and in Al2O3 than in SiO2.

引用

页码：401 / 406

页数：6

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