ZENER TUNNELING CONDITION AND THE HYSTERESIS OF TRAPPED CHARGE IN AN ALGASB BARRIER IN ALGASB/INAS/ALGASB DOUBLE-BARRIER STRUCTURES

被引:2
作者
BUOT, FA
RAJAGOPAL, AK
机构
[1] Naval Research Laboratory, Washington
关键词
D O I
10.1063/1.359192
中图分类号
O59 [应用物理学];
学科分类号
摘要
The essential role played by the physics of Zener tunneling of electrons from the barrier to the drain in finding the solutions to the field, energy-balance, and quantum transport equations in AlGaSb/InAs/AlGaSb double-barrier structures is pointed out. It is shown that the self-consistent physical consideration on these equations is crucial in obtaining interesting and realistic novel hysteresis phenomena of the trapped hole charge in an AlGaSb barrier. There exist solutions to the above equations which do not incorporate the physics of Zener tunneling, which are therefore physically untenable.
引用
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页码:6046 / 6048
页数:3
相关论文
共 4 条
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BUOT, FA ;
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APPLIED PHYSICS LETTERS, 1994, 64 (22) :2994-2996
[2]   HYSTERESIS OF TRAPPED CHARGE IN ALGASB BARRIER AS A MECHANISM FOR THE CURRENT BISTABILITY IN ALGASB/INAS/ALGASB DOUBLE-BARRIER STRUCTURES (VOL 64, PG 2994, 1994) [J].
BUOT, FA ;
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APPLIED PHYSICS LETTERS, 1994, 65 (24) :3153-3153
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[4]  
SCHULMAN JN, 1994, COMMUNICATION