SINGLE-SITE THEORY OF WANNIER EXCITONS IN DISORDERED SEMICONDUCTORS .1. GENERAL-CONSIDERATIONS

被引：2

作者：

FISCHBECK, HJ

STREHLOW, R

机构：

[1] Zentralinstitut Für Elektronenphysik, Akademie Der Wissenschaften Der Ddr

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 94卷 / 02期

关键词：

D O I：

10.1002/pssb.2220940216

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Starting from the general theory of interacting disordered systems a Bethe‐Salpeter equation is derived which describes Wannier excitons in disordered semiconductors. It contains both the Coulomb and the disorder vertex. The former is taken in the static vs approximation whereas the latter is derived from a single‐site approximation. Replacing the Coulomb vertex by an approximate product kernel this equation can be solved. An expression for the imaginary part of the dielectric function is obtained which is accessible to numerical evaluations. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

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页码：457 / 468

页数：12

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