THE EFFECT OF ION-IMPLANTATION DAMAGE ON DOPANT DIFFUSION IN SILICON DURING SHALLOW-JUNCTION FORMATION

被引：75

作者：

KIM, Y ^{[1
]}

MASSOUD, HZ ^{[1
]}

FAIR, RB ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 02期

关键词：

D O I：

10.1007/BF02657400

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：143 / 150

页数：8

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