RESONANT RAMAN SCATTERING BY RAMAN-ACTIVE INFRARED-INACTIVE PHONONS IN 2-4 SEMICONDUCTORS

被引：26

作者：

ANASTASSAKIS, E

PERRY, CH

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1971年 / 4卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.4.1251

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1251 / +

页数：1

共 49 条

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[8] RAMAN SCATTERING IN MG2SI, MG2GE, AND MG2SN [J].

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[9]

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