2-LEVEL AND 3-LEVEL RESONANT MEASUREMENTS OF IMPURITY-BOUND MAGNETOPOLARONS IN MULTIPLE-QUANTUM-WELL STRUCTURES

被引：20

作者：

CHENG, JP ^{[1
]}

MCCOMBE, BD ^{[1
]}

BROZAK, G ^{[1
]}

机构：

[1] NORTHEASTERN UNIV,BOSTON,MA 02115

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.43.9324

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Far-infrared photoconductivity has been used to follow the 1s-2p + transition of shallow donors confined in GaAs/Al(x)Ga(1-x)As multiple-quantum-well structures through resonant regions with GaAs optical phonons by magnetic field tuning up to 23.5 T. Both two-level and three-level measurements show anti-level-crossing behavior with the lower branches far below (approximately 50 cm-1) the resonant energies for the bulk long-wavelength LO phonons, resulting in extremely large, asymmetric interaction gaps. The results strongly suggest that electrons interact with more than one set of phonons, or a phonon band. The electron-interface-phonon interaction provides a plausible explanation for the experimental observations.

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收藏

页码：9324 / 9327

页数：4

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