The authors report for the first time a grating in GeO2-SiO2 planar waveguides formed by exposure to UV radiation. The grating gave a reflectivity of 44% with a bandwidth of 1.1 nm, which indicates an index modulation of at least 2.0 x 10(-4). The waveguide material was made sensitive to the UV radiation by annealing in H-2, which significantly enhanced the 240 nm absorption band.