ELECTRON CHARGE-DENSITIES AT CONDUCTION-BAND EDGES OF SEMICONDUCTORS

被引：55

作者：

RICHARDSON, SL

COHEN, ML

LOUIE, SG

CHELIKOWSKY, JR

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

[3] EXXON RES & ENGN CO,CORP RES SCI LABS,ANNANDALE,NJ 08801

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.33.1177

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1177 / 1182

页数：6

共 37 条

[1] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J].

BACHELET, GB ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1985, 31 (02) :879-887

[2]

BALDERESCHI A, 1978, 14TH P INT C PHYS SE, P1167

[3] ENERGY-BAND STRUCTURE OF SOLIDS FROM A PERTURBATION ON THE EMPTY LATTICE [J].

BASSANI, F ;

CELLI, V .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) :64-75

[4]

BASSANI F, 1966, SEMICONDUCTORS SEMIM

[5]

BASSANI F, 1975, ELECTRONIC STATES OP

[6]

Breslow R, 1969, ORGANIC REACTION MEC

[7]

Campbell J.A., 1970, CHEM SYSTEMS ENERGET

[8] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[9] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF THE ELECTRONIC-STRUCTURE OF PDH AND PD4H [J].

CHAN, CT ;

LOUIE, SG .

PHYSICAL REVIEW B, 1983, 27 (06) :3325-3337

[10] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

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