KINETICS OF THE SILICON DIOXIDE GROWTH-PROCESS IN AFTERGLOWS OF MICROWAVE-INDUCED PLASMAS

被引：31

作者：

VINCKIER, C

COECKELBERGHS, P

STEVENS, G

HEYNS, M

DEJAEGERE, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.339651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1450 / 1458

页数：9

共 43 条

[1] COLLISIONAL DEACTIVATION OF O(21D2) BY THE ATMOSPHERIC GASES [J].

AMIMOTO, ST ;

FORCE, AP ;

GULOTTY, RG ;

WIESENFELD, JR .

JOURNAL OF CHEMICAL PHYSICS, 1979, 71 (09) :3640-3647

[2]

ATANASSOVA ED, 1984, ADV LOW TEMP PLASMA, V1, P11

[3] TRANSPORT PROCESSES DURING THE GROWTH OF OXIDE-FILMS AT ELEVATED-TEMPERATURE [J].

ATKINSON, A .

REVIEWS OF MODERN PHYSICS, 1985, 57 (02) :437-470

[4] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J].

BLANC, J .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :424-426

[5] TEMPERATURE-DEPENDENCE OF THE RATE CONSTANTS FOR THE QUENCHING BY NITRIC-OXIDE OF THE 2 EXCITED SINGLET-STATES OF MOLECULAR-OXYGEN - O-2(A 1-DELTA-G) AND O-2(B-1-SIGMA-G+) [J].

BOODAGHIANS, R ;

BORRELL, PM ;

BORRELL, P .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1983, 79 :907-917

[6] RATE CONSTANTS FOR THE ENERGY-POOLING AND QUENCHING REACTIONS OF SINGLET MOLECULAR-OXYGEN AT HIGH-TEMPERATURES [J].

BORRELL, PM ;

BORRELL, P ;

GRANT, KR ;

PEDLEY, MD .

JOURNAL OF PHYSICAL CHEMISTRY, 1982, 86 (05) :700-703

[7]

CAYMAX M, 1982, 19TH S INT COMB P, P51

[8] The collisional deactivation of O-2((1)Delta(g)) [J].

Clark, I. D. ;

Wayne, R. P. .

CHEMICAL PHYSICS LETTERS, 1969, 3 (02) :93-95

[9] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[10] INTERACTIONS BETWEEN AFTERGLOW PRODUCTS OF MICROWAVE-INDUCED PLASMAS AND SOLIDS [J].

DEJAEGERE, S ;

WILLEMS, M ;

VINCKIER, C .

JOURNAL OF PHYSICAL CHEMISTRY, 1982, 86 (18) :3569-3577

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