MANY-BODY EFFECTS IN OPTICAL-SPECTRA OF N-DOPED ALLOY SEMICONDUCTOR QUANTUM-WELL STRUCTURES

Recently observed luminescence spectra in the alloy semiconductor quantum-well system InGaAs/InP show an enhancement of the electron-hole (e-h) recombination oscillator strength at the electron Fermi energy (E//F//e). This enhancement is explained, using a generalized e-h pair propagator and static screening, as due to multiple e-h scattering and recombination of the electrons at E//F//e with the small number of optically excited holes which have wave-vector components of the order of k//F//e (the electron Fermi wave-vector) due to localization effects. The localization is taken to arise from alloy disorder.