SILICON DIODES MADE BY LASER IRRADIATION

被引:90
作者
FAIRFIELD, JM
SCHWUTTKE, GH
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D O I
10.1016/0038-1101(68)90008-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1175 / +
页数:1
相关论文
共 3 条
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JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) :4088-+
[2]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243